Low‐temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor deposition
نویسندگان
چکیده
منابع مشابه
Initial stages of GaN/GaAs(100) growth by metalorganic chemical vapor deposition
A study of GaN buffers grown by metalorganic chemical vapor deposition on ~001! GaAs substrates was performed. Nucleation images obtained by atomic force microscopy ~AFM! were employed to investigate the growth temperature, growth time, and growth rate dependence of the nucleation mechanisms. The growth mode corresponds to two-dimensional ~2D! island nucleation at low temperatures, while three-...
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Quantum-mechanically coupled wen systems consisting of two GaAs wells 30 A thick separated by an Alo.s GIlo.s As barrier whose thickness was varied from 12 to 40 A have been grown by metalorganic chemical vapor deposition. The photoluminescence spectra of these systems indicated the splitting of a degenerate single well state into a doublet state, a symmetrical state, and an antisymmetric state...
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Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition (MOCVD) have been investigated by far-infrared (FIR) reflectance spectroscopy. The lattice vibration behaviors of a series of MOCVD InSb/GaAs(100) materials grown under different growth conditions were studied. Effects of III–V source ratios on the films crystalline quality were examined....
متن کاملPhotoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs
GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubit/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band-edge photoluminescence near 3!36 eV and 3.15-3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon-assisted,...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1994
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.111626